APTGF30TL601G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Three level inverter NPT IGBT Power Module

Three level inverter
NPT IGBT Power Module
APTGF30TL601G
V_CES = 600V
I_C = 30A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
600
V
T_C = 25°C
42
T_C = 80°C
30
A
T_C = 25°C
100
±20
V
T_C = 25°C
140
W
T_j = 125°C
60A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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