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APTGF30H60T3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module | |||
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APTGF30H60T3G
Full - Bridge
NPT IGBT Power Module
VCES = 600V
IC = 30A @ Tc = 80°C
13 14
Q1
Q3
18
CR1 CR3
11
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Features
⢠Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
⢠High level of integration
⢠Internal thermistor for temperature monitoring
Benefits
⢠Outstanding performance at high frequency
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal
for easy PCB mounting
⢠Low profile
⢠Easy paralleling due to positive TC of VCEsat
⢠Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
600
V
IC Continuous Collector Current
TC = 25°C
42
TC = 80°C
30
A
ICM Pulsed Collector Current
TC = 25°C
100
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
140
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 60A@500V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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