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APTGF300DA120G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module | |||
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APTGF300DA120G
Boost chopper
NPT IGBT Power Module
VCES = 1200V
IC = 300A @ Tc = 80°C
VBUS
CR1
OUT
Q2
G2
E2
0/VBUS
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
⢠Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
VBUS
E2
G2
0/VBUS
OUT
Benefits
⢠Outstanding performance at high frequency
operation
⢠Stable temperature behavior
⢠Very rugged
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
Tc = 25°C
400
Tc = 80°C
300
A
ICM Pulsed Collector Current
Tc = 25°C
600
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
Tc = 25°C
1780
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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