English
Language : 

APTGF300DA120D3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Boost chopper NPT IGBT Power Module
APTGF300DA120D3G
Boost chopper
NPT IGBT Power Module
VCES = 1200V
IC = 300A @ Tc = 80°C
3
Q2
1
6
7
2
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
TC = 25°C
420
TC = 80°C
300
A
ICM Pulsed Collector Current
TC = 25°C
600
VGE Gate – Emitter Voltage
±20
V
PD Maximum Power Dissipation
TC = 25°C
2100
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 600A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5