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APTGF25A120T1G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module
APTGF25A120T1G
Phase leg
NPT IGBT Power Module
VCES = 1200V
IC = 25A @ Tc = 80°C
56
11
Q1
CR1
7
8
3
NTC
4
Q2
CR2
9
10
12
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
1200
V
TC = 25°C
40
TC = 80°C
25
A
TC = 25°C
100
±20
V
TC = 25°C
208
W
Tj = 125°C
50A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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