APTGF250A60D3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module

APTGF250A60D3G
Phase leg
NPT IGBT Power Module
V_CES = 600V
I_C = 250A @ Tc = 80°C
3
Q1
4
5
1
Q2
6
7
2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_C = 25°C
400
T_C = 80°C
250
A
I_CM Pulsed Collector Current
T_C = 25°C
600
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
1250
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 600A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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