APTGF200U120DG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Single Switch with Series diodes NPT IGBT Power Module

APTGF200U120DG
Single Switch
with Series diodes
NPT IGBT Power Module
V_CES = 1200V
I_C = 200A @ Tc = 80°C
EK
Application
• Zero Current Switching resonant mode
E
C
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
G
CK
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
E
C
CK
EK
G
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
275
T_c = 80°C
200
A
I_CM Pulsed Collector Current
T_c = 25°C
600
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
1136
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 400A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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