APTGF180H60G Datasheet, PDF (1/6 Pages) Microsemi Corporation – APTGF180H60G NPT IGBT Power Module

APTGF180H60G
Full - bridge
NPT IGBT Power Module
V_CES = 600V
I_C = 180A @ Tc = 80°C
Q1
G1
VBUS
Q3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
G3
Features
E1
OUT1 OUT2
E3
• Non Punch Through (NPT) Fast IGBT^®
- Low voltage drop
- Low tail current
Q2
Q4
- Switching frequency up to 100 kHz
G2
G4
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
E2
E4
- Avalanche energy rated
- RBSOA and SCSOA rated
0/VBUS
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
OUT1
• High level of integration
G1
VBUS
E1
E3
G3
0/VBUS
OUT2
G2
Benefits
E2
• Outstanding performance at high frequency
operation
E4
• Stable temperature behavior
G4
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_c = 25°C
220
T_c = 80°C
180
A
I_CM Pulsed Collector Current
T_c = 25°C
630
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
833
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 400A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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