APTGF180DH60G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - bridge NPT IGBT Power Module

APTGF180DH60G
Asymmetrical - bridge
NPT IGBT Power Module
V_CES = 600V
I_C = 180A @ Tc = 80°C
Q1
G1
VBUS
CR3
E1
OUT1 OUT2
CR2
Q4
G4
E4
0/VBUS
OUT 1
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Non Punch Through (NPT) Fast IGBT^®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1
VBUS
E1
0/VBUS
O UT2
Benefits
• Outstanding performance at high frequency
operation
E4
• Stable temperature behavior
G4
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive T_C of V_CEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
600
V
I_C Continuous Collector Current
T_c = 25°C
220
T_c = 80°C
180
A
I_CM Pulsed Collector Current
T_c = 25°C
630
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
833
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 400A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6