APTGF15H120T3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module

APTGF15H120T3G
Full - Bridge
NPT IGBT Power Module
13 14
Q1
Q3
18
CR1 CR3
11
19
10
22 7
23 8
Q2
Q4
CR2 CR4
26
4
27
3
29
30
15
31
32
16
R1
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V_CES = 1200V
I_C = 15A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT^®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_C = 25°C
25
T_C = 80°C
15
A
I_CM Pulsed Collector Current
T_C = 25°C
60
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_C = 25°C
140
W
RBSOA Reverse Bias Safe Operating Area
T_j = 125°C 30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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