APTGF15H120T1G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module

APTGF15H120T1G
Full - Bridge
NPT IGBT Power Module
V_CES = 1200V
I_C = 15A @ Tc = 80°C
3
4
Q1
Q3
CR1 CR3
5
2
61
Q2
Q4
CR2 CR4
7
9
8
10
11
NTC
12
Pins 3/4 must be shorted together
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Max ratings
Unit
1200
V
T_C = 25°C
25
T_C = 80°C
15
A
T_C = 25°C
60
±20
V
T_C = 25°C
140
W
T_j = 125°C
30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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