|
APTGF150H120G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module | |||
|
APTGF150H120G
Full - Bridge
NPT IGBT Power Module
VCES = 1200V
IC = 150A @ Tc = 80°C
Q1
G1
VBUS
Q3
E1
OUT1 OUT2
Q2
Q4
G2
E2
0/VBUS
G1
VBUS
E1
E3
G3
OUT1
0/VBUS
OUT2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
G3
Features
E3
⢠Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
G4
- Soft recovery parallel diodes
- Low diode VF
E4
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
Benefits
G2
⢠Outstanding performance at high frequency
operation
E2
⢠Stable temperature behavior
⢠Very rugged
E4
⢠Direct mounting to heatsink (isolated package)
G4
⢠Low junction to case thermal resistance
⢠Easy paralleling due to positive TC of VCEsat
⢠Low profile
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VCES Collector - Emitter Breakdown Voltage
1200
V
IC Continuous Collector Current
Tc = 25°C
200
Tc = 80°C
150
A
ICM Pulsed Collector Current
Tc = 25°C
300
VGE Gate â Emitter Voltage
±20
V
PD Maximum Power Dissipation
Tc = 25°C
961
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 300A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
|
▷ |