APTGF100A1202G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module

APTGF100A1202G
Phase leg
NPT IGBT Power Module
V_CES = 1200V
I_C = 100A @ Tc = 80°C
17 18
16
1
15
14
13
2
3
4
12
11
5
10 9
6
7
8
Pins 1/2/3/4 ; 5/6/7/8 ; 11/12/13/14/15/16
must be shorted together
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
Features
 Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 Very low stray inductance
 High level of integration
Benefits
 Outstanding performance at high frequency
operation
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive T_C of V_CEsat
 RoHS Compliant
All ratings @ T_j = 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_CES Collector - Emitter Breakdown Voltage
1200
V
I_C Continuous Collector Current
T_c = 25°C
135
T_c = 80°C
100
A
I_CM Pulsed Collector Current
T_c = 25°C
300
V_GE Gate – Emitter Voltage
±20
V
P_D Maximum Power Dissipation
T_c = 25°C
568
W
RBSOA Reverse Bias Safe Operating Area
T_j = 150°C 200A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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