APTDF100H601G Datasheet, PDF (1/4 Pages) Microsemi Corporation – Fast Diode Full Bridge Power Module

APTDF100H601G
Fast Diode Full Bridge
Power Module
V_RRM = 600V
I_C = 100A* @ Tc = 80°C
34
CR1
CR3
5
6
CR2
1
2
CR4
78
9 10
Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• Ultra fast recovery times
• Soft recovery characteristics
• High blocking voltage
• High current
• Low leakage current
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Low losses
• Low noise switching
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_R Maximum DC reverse Voltage
V_RRM Maximum Peak Repetitive Reverse Voltage
600
V
I_F(AV)
Maximum Average Forward
Current
Duty cycle = 50% ^{TC = 25°C}
T_C = 80°C
135 *
100 *
A
I_FSM Non-Repetitive Forward Surge Current
8.3ms TC = 45°C
500
* Specification of diode device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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