APTDC30H1201G Datasheet, PDF (1/3 Pages) Microsemi Corporation – SiC Diode Full Bridge Power Module

APTDC30H1201G
SiC Diode Full Bridge
Power Module
V_RRM = 1200V
I_F = 30A @ Tc = 80°C
34
CR1
CR3
5
6
CR2
1
2
CR4
78
9 10
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Low losses
• Low noise switching
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_R Maximum DC reverse Voltage
V_RRM Maximum Peak Repetitive Reverse Voltage
1200
V
I_F(AV) Maximum Average Forward Current Duty cycle = 50% T_C = 80°C
30
A
I_FSM Non-Repetitive Forward Surge Current
10 µs TC = 25°C
370
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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