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APTDC10H1201G Datasheet, PDF (1/3 Pages) Microsemi Corporation – SiC Diode Full Bridge Power Module | |||
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APTDC10H1201G
SiC Diode Full Bridge
Power Module
VRRM = 1200V
IF = 10A @ Tc = 80°C
34
CR1
CR3
5
6
CR2
1
2
CR4
78
9 10
All multiple inputs and outputs must be shorted together
3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10
Application
⢠Uninterruptible Power Supply (UPS)
⢠Induction heating
⢠Welding equipment
⢠High speed rectifiers
Features
⢠SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
⢠Very low stray inductance
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency
operation
⢠Low losses
⢠Low noise switching
⢠Solderable terminals for easy PCB mounting
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IF(AV) Maximum Average Forward Current Duty cycle = 50% TC = 80°C
10
A
IFSM Non-Repetitive Forward Surge Current
10 µs TC = 25°C
125
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-3
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