APTCV90TL12T3G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module

APTCV90TL12T3G
Three level inverter
CoolMOS & Trench + Field Stop IGBT4
Power Module
Trench & Field Stop IGBT4 Q2, Q3:
V_CES = 1200V ; I_C = 50A @ Tc = 80°C
CoolMOS™ Q1, Q4:
V_DSS = 900V ; I_D = 23A @ Tc = 80°C
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234
78
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Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Q2, Q3 Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
• Q1, Q4 CoolMOS™
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
All ratings @ T_j = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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