APTCV60TLM991G Datasheet, PDF (1/8 Pages) Microsemi Corporation – Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module

APTCV60TLM991G
Three level inverter
CoolMOS & Trench + Field Stop IGBT
Power Module
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
Trench & Field Stop IGBT Q2, Q3:
V_CES = 600V ; I_C = 30A @ Tc = 80°C
CoolMOS™ Q1, Q4:
V_DSS = 600V ; I_D = 17A @ Tc = 80°C
Application
• Solar converter
• Uninterruptible Power Supplies
Features
• Q2, Q3 Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Q1, Q4 CoolMOS™
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
All ratings @ T_j = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
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