APTCV50H60T3G Datasheet, PDF (1/9 Pages) Microsemi Corporation – Full - Bridge NPT & Trench + Field Stop® IGBT Power module

APTCV50H60T3G
Full - Bridge
NPT & Trench + Field Stop^® IGBT
Power module
Trench & Field Stop^® IGBT Q1, Q3:
V_CES = 600V ; I_C = 50A @ Tc = 80°C
CoolMOS™ Q2, Q4:
V_CES = 600V ; I_C = 49A @ Tc = 25°C
13
14
Q1
18
19
Q2
CR1 CR3
22
7
23
8
26
27
Q3
11
10
Q4
4
3
29 30
31 32
NTC
15
16
Top switches : Trench + Field Stop IGBT^®
Bottom switches : CoolMOS™
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
13/14 ; 15/16 ; 26/27 ; 31/32
Application
• Solar converter
Features
• Q2, Q4 CoolMOS™
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Q1, Q3 Trench & Field Stop IGBT^®
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Optimized conduction & switching losses
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive T_C of V_CEsat
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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