APTCV40H60CT1G Datasheet, PDF (1/10 Pages) Microsemi Corporation – Full - Bridge CoolMOS & Trench + Field Stop® IGBT Power module

APTCV40H60CT1G
Full - Bridge
CoolMOS & Trench + Field Stop^® IGBT
Power module
Trench & Field Stop^® IGBT Q1, Q3:
V_CES = 600V ; I_C = 50A @ Tc = 80°C
CoolMOS™ Q2, Q4:
V_DSS = 600V ; I_D = 36A @ Tc = 25°C
3
4
Q1
5
Q2
7
CR1
CR3
61
Q3
2
Q4
9
8
10
11
NTC
12
Top switches : Trench + Field Stop IGBT^®
Bottom switches : CoolMOS™
Pins 3/4 must be shorted together
Application
• Solar converter
Features
• Q2, Q4 CoolMOS™
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
- Fast intrinsic diode
• Q1, Q3 Trench & Field Stop IGBT^®
- Low voltage drop
- Switching frequency up to 20 kHz
- RBSOA & SCSOA rated
- Low tail current
• SiC Schottky Diode (CR1, CR3)
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS Compliant
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
All ratings @ T_j = 25°C unless otherwise specified
www.microsemi.com
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