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APTC90TDUM60TPG Datasheet, PDF (1/5 Pages) Microsemi Corporation – Triple dual Common Source Super Junction MOSFET Power Module | |||
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APTC90TDUM60TPG
Triple dual Common Source
Super Junction MOSFET
Power Module
VDSS = 900V
RDSon = 60mΩ max @ Tj = 25°C
ID = 59A @ Tc = 25°C
D1
D3
D5
G1
G3
G5
S1/S2
S1
S3/S4
S3
S5/ S6
S5
S2
S4
S6
G2
G4
G6
D2
D4
D6
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
Features
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- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠High level of integration
⢠Internal thermistor for temperature monitoring
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Very low (12mm) profile
⢠Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Max ratings Unit
900
V
Tc = 25°C
59
Tc = 80°C
44
A
150
±20
V
60
mΩ
Tc = 25°C
462
W
8.8
A
2.9
1940
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
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