APTC90DDA12CT1G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Dual boost chopper Super Junction MOSFET SiC chopper diode

APTC90DDA12CT1G
Dual boost chopper
Super Junction MOSFET
SiC chopper diode
V_DSS = 900V
R_DSon = 120mΩ max @ Tj = 25°C
I_D = 30A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
Pins 3/4 must be shorted together
easy PCB mounting
• Low profile
Absolute maximum ratings
• RoHS Compliant
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
900
V
T_c = 25°C
30
T_c = 80°C
23
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
75
±20
V
120
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
250
W
I_AR Avalanche current (repetitive and non repetitive)
8.8
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
2.9
1940
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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