APTC90DAM60CT1G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Boost chopper Super Junction MOSFET Power Module

APTC90DAM60CT1G
Boost chopper
Super Junction MOSFET
Power Module
56
11
V_DSS = 900V
R_DSon = 60mΩ max @ Tj = 25°C
I_D = 59A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
CR1
Features
•
3 _NTC
Q2
4
9
10
12
12
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• CR1 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
900
V
T_c = 25°C
59
T_c = 80°C
44
A
150
±20
V
60
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
462
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
8.8
A
2.9
1940
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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