APTC80H15T3G Datasheet, PDF (1/6 Pages) Advanced Power Technology – Full - Bridge Super Junction MOSFET Power Module

APTC80H15T3G
Full - Bridge
Super Junction MOSFET
Power Module
V_DSS = 800V
R_DSon = 150mΩ max @ Tj = 25°C
I_D = 28A @ Tc = 25°C
13 14
Q1
18
22 7
19
23 8
Q2
Q3
11
10
Q4
26
4
27
3
29
30
15
31
R1
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
800
V
T_c = 25°C
28
T_c = 80°C
21
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
110
±30
V
150
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
277
W
I_AR Avalanche current (repetitive and non repetitive)
17
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
670
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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