APTC80AM75SCG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80AM75SCG
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
V_DSS = 800V
R_DSon = 75mΩ max @ Tj = 25°C
I_D = 56A @ Tc = 25°C
Application
VBUS
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
G1
OUT
S1
Q2
G2
0/VBUS
S2
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
G1
VBUS
S1
0/VBUS
OUT
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
S2
Benefits
G2
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
800
V
T_c = 25°C
56
T_c = 80°C
43
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
232
±30
V
75
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
568
W
I_AR Avalanche current (repetitive and non repetitive)
17
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
0.5
mJ
670
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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