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APTC60TDUM35PG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Triple dual Common Source Super Junction MOSFET Power Module | |||
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APTC60TDUM35PG
Triple dual Common Source
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 35m⦠max @ Tj = 25°C
ID = 72A @ Tc = 25°C
D1
G1
D3
G3
D5
G5
Application
⢠AC Switches
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
S1
S3
S1/S2
S5
S3/S 4
S5/ S6
Features
â¢
S2
S4
S6
G2
D2
G4
D4
G6
D6
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠High level of integration
D1
G1
S1 /S 2
S1
S2
G2
D2
D3
G3
S3 /S4
S3
S4
G4
D4
D5
G5
S5 /S6
S5
S6
G6
D6
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Very low (12mm) profile
⢠Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
600
V
ID Continuous Drain Current
Tc = 25°C
72
Tc = 80°C
54
A
IDM Pulsed Drain current
200
VGS Gate - Source Voltage
±20
V
RDSon Drain - Source ON Resistance
35
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
416
W
IAR Avalanche current (repetitive and non repetitive)
20
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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