APTC60TDUM24TPG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Triple dual Common Source Super Junction MOSFET Power Module

APTC60TDUM24TPG
Triple dual Common Source
Super Junction MOSFET
Power Module
V_DSS = 600V
R_DSon = 24mΩ max @ Tj = 25°C
I_D = 95A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring
• High level of integration
D1
D3
D5
G1
G3
G5
S1/S2
S1
S3/S4
S3
S5/ S6
S5
S2
S4
S6
G2
G4
G6
D2
D4
D6
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
P_D
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
600
V
T_c = 25°C
95
T_c = 80°C
70
A
260
±20
V
24
mΩ
T_c = 25°C
462
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
15
A
3
mJ
1900
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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