APTC60DHM45T1G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Asymmetrical bridge Super Junction MOSFET Power Module

APTC60DHM45T1G
Asymmetrical bridge
Super Junction MOSFET
Power Module
V_DSS = 600V
R_DSon = 45mΩ max @ Tj = 25°C
I_D = 49A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Max ratings Unit
600
V
T_c = 25°C
49
T_c = 80°C
38
A
130
±20
V
45
mΩ
T_c = 25°C
250
W
15
A
3
1900
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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