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APTC60DHM24T3G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Asymmetrical Bridge Super Junction MOSFET Power Module | |||
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APTC60DHM24T3G
Asymmetrical Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
13 14
Q1
18
CR3
22
7
19
23
8
Q4
CR2
4
29
30
15
31
R1
3
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23â¦
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Switched Reluctance Motor Drives
Features
â¢
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal
for easy PCB mounting
⢠Low profile
⢠RoHS compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Max ratings Unit
600
V
Tc = 25°C
95
Tc = 80°C
70
A
260
±20
V
24
mΩ
Tc = 25°C
462
W
15
A
3
1900
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
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