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APTC60DDAM70T3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Dual boost chopper Super Junction MOSFET Power Module | |||
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APTC60DDAM70T3G
Dual boost chopper
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70m⦠max @ Tj = 25°C
ID = 39A @ Tc = 25°C
13 14
CR1
CR2
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
22 7
23 8
Q1
26
Q2
4
27
3
29
30
15
31
R1
32
16
Features
â¢
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a single
boost of twice the current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
600
V
Tc = 25°C
39
Tc = 80°C
29
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
160
±20
V
70
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
250
W
IAR Avalanche current (repetitive and non repetitive)
20
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
1
1800
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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