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APTC60DDAM70T1G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Dual boost chopper Super Junction MOSFET Power Module | |||
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APTC60DDAM70T1G
Dual boost chopper
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 39A @ Tc = 25°C
Pins 3/4 must be shorted together
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
Features
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- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Each leg can be easily paralleled to achieve a single
boost of twice the current capability
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
600
V
Tc = 25°C
39
Tc = 80°C
29
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
160
±20
V
70
mΩ
PD Maximum Power Dissipation
Tc = 25°C
250
W
IAR Avalanche current (repetitive and non repetitive)
20
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â7
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