APTC60DAM18CTG Datasheet, PDF (1/7 Pages) Advanced Power Technology – Boost chopper SiC FWD diode Super Junction MOSFET Power Module

APTC60DAM18CTG
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
VBUS SENSE
VBUS
NTC2
CR1
V_DSS = 600V
R_DSon = 18mΩ max @ Tj = 25°C
I_D = 143A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
Q2
G2
S2
0/VBU S
OUT
NTC1
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• FWD SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
VB US
VB US
SE NSE
G2
S2
0/VBUS
S2
G2
OUT
OUT
NTC2
NTC1
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
Parameter
• RoHS compliant
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
600
V
T_c = 25°C
143
T_c = 80°C
107
A
572
±30
V
18
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
833
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
20
A
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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