|
APTC60AM35SCTG Datasheet, PDF (1/8 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module | |||
|
APTC60AM35SCTG
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
Q1
G1
S1
Q2
VBUS
NT C2
O UT
VDSS = 600V
RDSon = 35m⦠max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Application
⢠Motor control
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
Features
â¢
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
⢠Parallel SiC Schottky Diode
G2
- Zero reverse recovery
0/VBUS
S2
- Zero forward recovery
- Temperature Independent switching behavior
NT C1
- Positive temperature coefficient on VF
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
OUT
VBUS
Benefits
0/VB US
S1
S2
G1
G2
OUT
NTC2
NTC1
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
Absolute maximum ratings
Symbol
Parameter
⢠RoHS Compliant
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
600
V
Tc = 25°C
72
Tc = 80°C
54
A
288
±30
V
35
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
416
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
20
A
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â8
|
▷ |