APT94N65B2C3 Datasheet, PDF (1/5 Pages) Microsemi Corporation – Super Junction MOSFET

650V
94A
APT94N65B2C3
APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
Super Junction MOSFET
• Ultra Low R_DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• Extreme ^dv/dt Rated
• Dual die (parallel)
• Popular T-MAX Package
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
T-Max^TM
D
G
S
MAXIMUM RATINGS
Symbol Parameter
V_{DSS Drain-Source Voltage}
I_D ^{Continuous Drain Current @ TC = 25°C}
Continuous Drain Current @ T_C = 100°C
I_{DM Pulsed Drain Current} ¹
V_{GS Gate-Source Voltage Continuous}
P_D ^{Total Power Dissipation @ TC = 25°C}
All Ratings per die: T_C = 25°C unless otherwise specified.
APT94N65B2C3S(G) _UNIT
650
Volts
94
60
Amps
282
20
Volts
415
Watts
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_{L Lead Temperature: 0.063" from Case for 10 Sec.}
dv/dt _{Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)}
I_{AR Avalanche Current} ²
E_{AR Repetitive Avalanche Energy} 2
( Id = 7A, Vdd = 50V )
E_AS Single Pulse Avalanche Energy ^{( Id = 3.5A, Vdd = 50V )}
-55 to 150
260
50
7
1
1800
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol ^{Characteristic / Test Conditions}
MIN TYP MAX UNIT
BV_(DSS)
R_DS(on)
I_DSS
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 500μA)
Drain-Source On-State Resistance ³ (V_GS = 10V, I_D = 60A)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V, T_C = 150°C)
650
0.03 0.035
1.0
50
100
I_GSS
V_GS(th)
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 5.8mA)
±200
2.1
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Volts
Ohms
μA
nA
Volts
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com