APT8DQ60K_08 Datasheet, PDF (1/4 Pages) Microsemi Corporation – ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

600V 8A
APT8DQ60K APT8DQ60SA
APT8DQ60KG* APT8DQ60SAG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• PFC
PRODUCT FEATURES
• Ultrafast Recovery Times
PRODUCT BENEFITS
• Low Losses
• Soft Recovery Characteristics • Low Noise Switching
• Popular TO-220 Package or
• Cooler Operation
Surface Mount D² PAK Package
• Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Avalanche Energy Rated
• Increased System Power
Density
(K)
1
2
1
D²PAK
(SA)
1
2
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings: T_C = 25°C unless otherwise specified.
APT8DQ60K_SA(G) UNIT
V_R
V_RRM
V_RWM
I_F(AV)
I_F(RMS)
I_FSM
E_AVL
T_J,T_STG
T_L
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T_C = 128°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
600
8
16
110
20
-55 to 175
300
Volts
Amps
mJ
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V_F
Forward Voltage
I_{RM Maximum Reverse Leakage Current}
C_T
Junction Capacitance, V_R = 200V
I_F = 8A
I_F = 16A
I_F = 8A, T_J = 125°C
V_R = 600V
V_R = 600V, T_J = 125°C
MIN TYP MAX UNIT
2.0 2.4
2.5
Volts
1.5
25
µA
500
16
pF
MicrosemiWebsite-http://www.microsemi.com