APT8020B2FLL Datasheet, PDF (1/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

APT8020B2FLL
APT8020LFLL
800V 38A 0.220Ω
POWER MOS 7 ^R FREDFET
B2FLL
Power MOS 7^® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed
and Q_g. Power MOS
with Power MOS 7^® by significantly lowering
7^® combines lower conduction and switching
R_DS(ON)
losses
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
T-MAX™
TO-264
LFLL
• Lower Input Capacitance • Increased Power Dissipation
D
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT8020B2_LFLL
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
800
Volts
38
Amps
152
±30
Volts
±40
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
694
5.56
Watts
W/°C
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
-55 to 150
300
38
50
3000
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 19A)
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 640V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 2.5mA)
MIN TYP MAX UNIT
800
Volts
0.220 Ohms
250
µA
1000
±100 ^nA
3
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com