APT77N60JC3 Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction MOSFET

APT77N60JC3
600V 77A 0.035Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low R_DS(ON)
• Ultra Low Gate Charge, Q_g
• Popular SOT-227 Package
• Low Miller Capacitance
• Avalanche Energy Rated
• N-Channel Enhancement Mode
ISOTOP^fi
"UL Recongnized"
file # 145592
D
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT77N60JC3
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
600
77
231
±20
±30
568
4.55
Volts
Amps
Volts
Watts
W/°C
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 480V, I_D = 77A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
-55 to 150
300
50
20
1
1800
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS ^{Drain-Source Breakdown Voltage (V}_GS ^{= 0V, I}_D ^{= 500µA)}
600
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 60A)
.030 0.035
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V, T_J = 150°C)
1.0
50
500
I_GSS Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
±200
V_GS(th) ^{Gate Threshold Voltage (V}_DS ^{= V}_GS^{, I}_D ^{= 5.4mA)}
2.1
3
3.9
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
Microsemi Website - http://www.microsemi.com
"COOLMOS^™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"