APT60S20B2CTG Datasheet, PDF (1/4 Pages) Microsemi Corporation – HIGH VOLTAGE SCHOTTKY DIODE

1
3
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
T-Max
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23
APT60S20B2CT(G) 200V 2X75A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
HIGH VOLTAGE SCHOTTKY DIODE
PRODUCT APPLICATIONS
• Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• 48 Volt Output Rectifiers
• High Speed Rectifiers
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular T-MAX™ Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
MAXIMUM RATINGS
All Ratings Are Per Leg: T_C = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions
APT60S20B2CT(G) UNIT
V_R
V_RRM
V_RWM
I_F(AV)
I_F(RMS)
I_FSM
T_J,T_STG
T_L
E_VAL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T_C = 123°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T_J = 45°C, 8.3ms)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Avalanche Energy (2A, 30mH)
200
75
208
600
-55 to 150
300
60
Volts
Amps
°C
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V_F
Forward Voltage
I_{RM Maximum Reverse Leakage Current}
C_T
Junction Capacitance, V_R = 200V
I_F = 60A
I_F = 120A
I_F = 60A, T_J = 125°C
V_R = 200V
V_R = 200V, T_J = 125°C
MIN TYP MAX UNIT
.83 .90
.98
Volts
.72
1
mA
25
300
pF
Microsemi Website - http://www.microsemi.com