APT6045BVFR Datasheet, PDF (1/4 Pages) Microsemi Corporation – POWER MOS V® FREDFET

APT6045BVFR APT6045SVFR
APT6045BVFRG APT6045SVFRG
600V 15A 0.45 Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS V^® FREDFET
Power MOS V^® is a new generation of high voltage N-Channel enhance-
ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
V^® also achieves faster switching speeds through optimized gate layout.
BVFR
TO-247
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• _{FAST RECOVERY BODY DIODE}
• TO-247 or Surface Mount D³PAK Package
D³PAK
SVFR
D
G
S
MAXIMUM RATINGS
Symbol Parameter
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
All Ratings: T_C = 25°C unless otherwise specified.
APT6045B_SVFR(G) UNIT
600
Volts
15
Amps
60
±30
Volts
±40
250
Watts
2.0
W/°C
-55 to 150
300
15
°C
Amps
30
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_DSS Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA)
600
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 7.5A)
I_DSS
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 480V, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
2
0.45
250
1000
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
μA
nA
Volts
Microsemi Website - http://www.microsemi.com