APT58F50J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET

APT58F50J

500V, 58A, 0.065Ω Max, t_rr ≤320ns
N-Channel FREDFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C_rss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
"UL Recognized"
ISOTOP^®
file # E145592
APT58F50J
D
Single die FREDFET _G
S
FEATURES
•Fast switching with low EMI
•Low t_rr for high reliability
•Ultra low C_rss for improved noise immunity
•Low gate charge
•Avalanche energy rated
•RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
•Half bridge
•PFC and other boost converter
• Buck converter
•Single and two switch forward
•Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
R_θCS
T_J,T_STG
V_Isolation
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_T
Package Weight
Torque _{Terminals and Mounting Screws.}
Ratings
58
37
270
±30
1845
42
Min Typ Max

540

0.23
0.15
-55
150
2500
1.03

29.2

10

1.1
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
MicrosemiWebsite-http://www.microsemi.com