APT56F60B2 Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET

APT56F60B2
APT56F60L
600V, 60A, 0.11Ω Max, trr ≤290ns
N-Channel FREDFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
T-Max^®
TO-264
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t_rr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching loss. The _{APT56F60B2 APT56F60L}
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
D
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
Single die FREDFET _G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat, Greased Surface}
T_J,T_{STG Operating and Storage Junction Temperature Range}
T_L
Soldering Temperature for 10 Seconds (1.6mm from case)
W_{T Package Weight}
Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Ratings
Unit
60
38
A
210
±30
V
1580
mJ
28
A
Min Typ Max Unit
1040 W
0.12
°C/W
0.11
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m