APT51M50J_09 Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel MOSFET

APT51M50J
500V, 51A, 0.075Ω Max
N-Channel MOSFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C_rss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
"UL Recognized"
ISOTOP^®
file # E145592
APT51M50J
D
Single die MOSFET _G
S
FEATURES
• Fast switching with low EMI/RFI
• Low R_DS(on)
• Ultra low C_rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_θCS
T_J,T_STG
V_Isolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_{T Package Weight}
Torque _{Terminals and Mounting Screws.}
MicrosemiWebsite-http://www.microsemi.com
Ratings
Unit
51
32
A
230
±30
V
1580
mJ
37
A
Min
-55
2500
Typ Max Unit
480
W
0.26
°C/W
0.15
150 °C
V
1.03
oz
29.2
g
10 ^in·lbf
1.1 N·m