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APT51F50J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET
APT51F50J
500V, 51A, 0.075Ω Max, trr ≤310ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
"UL Recognized"
ISOTOP®
file # E145592
APT51F50J
D
Single die FREDFET G
S
FEATURES
•Fast switching with low EMI
•Low trr for high reliability
•Ultra low Crss for improved noise immunity
•Low gate charge
•Avalanche energy rated
•RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
•Half bridge
•PFC and other boost converter
• Buck converter
•Single and two switch forward
•Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
RθCS
TJ,TSTG
VIsolation
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT
Package Weight
Torque Terminals and Mounting Screws.
Ratings
51
32
230
±30
1580
37
Min Typ Max
480
0.26
0.15
-55
150
2500
1.03
29.2
10
1.1
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
in·lbf
N·m
MicrosemiWebsite-http://www.microsemi.com