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APT5010JVRU2 Datasheet, PDF (1/7 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |||
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APT5010JVRU2
ISOTOP® Boost chopper
MOSFET Power Module
VDSS = 500V
RDSon = 100m⦠max @ Tj = 25°C
ID = 44A @ Tc = 25°C
K
D
G
S
S
G
K
D
ISOTOPï
Application
⢠AC and DC motor control
⢠Switched Mode Power Supplies
⢠Power Factor Correction
⢠Brake switch
Features
⢠Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
⢠ISOTOP® Package (SOT-227)
⢠Very low stray inductance
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Very rugged
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
500
V
Tc = 25°C
44
Tc = 80°C
33
A
176
±30
V
100
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
450
W
IAR Avalanche current (repetitive and non repetitive)
44
A
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
50
2500
mJ
IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 80°C
30
A
IFRMS RMS Forward Current (Square wave, 50% duty)
39
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
www.microsemi.com
1â7
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