APT44H60J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel Ultrafast Recovery FREDFET

APT44H60J
600V, 44A, 0.011Ω Max, trr ≤250ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
t_rr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
"UL Recognized"
ISOTOP^®
file # E145592
APT44H60J
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI
• Very Low t_rr for maximum reliability
• Ultra low C_rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• UPS
• Welding
• Solar inverters
• Telecom rectifiers
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat, Greased Surface}
T_J,T_STG
V_Isolation
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_T
Package Weight
Torque _{Terminals and Mounting Screws.}
Microsemi Website - http://www.microsemi.com
Ratings
Unit
44
28
A
245
±30
V
1845
mJ
33
A
Min
-55
2500
Typ
0.15
1.03
29.2
Max Unit
540
W
0.23
°C/W
150
°C
V
oz
g
10 ^in·lbf
1.1 ^N·m