APT38M50J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel MOSFET

APT38M50J
500V, 38A, 0.10Ω Max
N-Channel MOSFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low C_rss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
"UL Recognized"
ISOTOP^®
file # E145592
APT38M50J
D
Single die MOSFET
G
S
FEATURES
• Fast switching with low EMI/RFI
• Low R_DS(on)
• Ultra low C_rss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_{θCS Case to Sink Thermal Resistance, Flat, Greased Surface}
T_J,T_STG
V_Isolation
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_T
Package Weight
Torque _{Terminals and Mounting Screws.}
Microsemi Website - http://www.microsemi.com
Ratings
Unit
38
24
A
175
±30
V
1200
mJ
28
A
Min
-55
2500
Typ
0.15
1.03
29.2
Max Unit
357
W
0.35
°C/W
150
°C
V
oz
g
10 ^in·lbf
1.1 N·m