 English |
|
|
|
|
|
|
|
| APT35GA90B Datasheet, PDF (1/6 Pages) Microsemi Corporation – High Speed PT IGBT | |||
| |||
|
APT35GA90B
APT35GA90S
900V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
TO-247
VCE(ON) tradeoff results in superior efï¬ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT35GA90B
APT35GA90S
D3PAK
when switching at high frequency.
Single die IGBT
FEATURES
⢠Fast switching with low EMI
⢠Very Low Eoff for maximum efï¬ciency
⢠Ultra low Cres for improved noise immunity
⢠Low conduction loss
⢠Low gate charge
⢠Increased intrinsic gate resistance for low EMI
⢠RoHS compliant
TYPICAL APPLICATIONS
⢠ZVS phase shifted and other full bridge
⢠Half bridge
⢠High power PFC boost
⢠Welding
⢠UPS, solar, and other inverters
⢠High frequency, high efï¬ciency industrial
Absolute Maximum Ratings
Symbol Parameter
Vces
IC1
IC2
ICM
VGE
PD
SSOA
TJ, TSTG
TJ
Collector Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
Gate-Emitter Voltage 2
Total Power Dissipation @ TC = 25°C
Switching Safe Operating Area @ TJ = 150°C
Operating and Storage Junction Temperature Range
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
Ratings
900
63
35
105
±30
290
105A @ 900V
-55 to 150
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise speciï¬ed
Test Conditions
Min
VBR(CES)
VCE(on)
VGE(th)
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
VGE = 0V, IC = 1.0mA
900
VGE = 15V,
IC = 18A
TJ = 25°C
TJ = 125°C
VGE =VCE , IC = 1mA
3
VCE = 900V,
VGE = 0V
TJ = 25°C
TJ = 125°C
VGS = ±30V
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
RθJC
Junction to Case Thermal Resistance
-
WT
Package Weight
-
Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw
Typ
2.5
2.2
4.5
Typ
-
5.9
Max
3.1
6
250
1000
±100
Max
0.43
-
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese