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APT34M120J-09 Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel MOSFET | |||
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APT34M120J
1200V, 35A, 0.29Ω Max
N-Channel MOSFET
Power MOS 8⢠is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in ï¬yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
"UL Recognized"
ISOTOP®
file # E145592
APT34M120J
D
Single die MOSFET G
S
FEATURES
⢠Fast switching with low EMI/RFI
⢠Low RDS(on)
⢠Ultra low Crss for improved noise immunity
⢠Low gate charge
⢠Avalanche energy rated
⢠RoHS compliant
TYPICAL APPLICATIONS
⢠PFC and other boost converter
⢠Buck converter
⢠Two switch forward (asymmetrical bridge)
⢠Single switch forward
⢠Flyback
⢠Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
MicrosemiWebsite-http://www.microsemi.com
Ratings
Unit
35
22
A
195
±30
V
2700
mJ
25
A
Min
-55
2500
Typ Max Unit
960
W
0.13
°C/W
0.11
150 °C
V
1.03
oz
29.2
g
10 in·lbf
1.1 N·m
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