APT30M70BVRG Datasheet, PDF (1/4 Pages) Microsemi Corporation – 100% Avalanche Tested

APT30M70BVR
APT30M70SVR
300V 48A 0.070Ω
POWER MOS V^®
Power MOS V^® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V^®
also achieves faster switching speeds through optimized gate layout.
D³PAK
TO-247
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• TO-247 or Surface Mount D³PAK Package
D
G
S
MAXIMUM RATINGS
Symbol
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
T_J,T_STG
T_L
I_AR
E_AR
E_AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current ¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ⁴
All Ratings: T_C = 25°C unless otherwise specified.
APT30M70BVR_SVR
300
48
192
±30
±40
370
2.96
-55 to 150
300
48
30
1300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BV_{DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)}
300
I_D(on) On State Drain Current ² (V_DS > I_D(on) x R_DS(on) Max, V_GS = 10V)
48
R_DS(on) Drain-Source On-State Resistance ² (V_GS = 10V, 0.5 I_D[Cont.])
I_DSS
Zero Gate Voltage Drain Current (V_DS = V_DSS, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 0.8 V_DSS, V_GS = 0V, T_C = 125°C)
I_GSS Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
V_GS(th) Gate Threshold Voltage (V_DS = V_GS, I_D = 1.0mA)
2
0.070
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
Amps
Ohms
µA
nA
Volts