APT30F60J Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET

APT30F60J
600V, 31A, 0.15Ω Max, trr ≤270ns
N-Channel FREDFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t_rr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
"UL Recognized"
ISOTOP^®
file # E145592
APT30F60J
D
Single die FREDFET _G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage}
E_{AS Single Pulse Avalanche Energy} 2
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
R_θCS
T_J,T_STG
V_Isolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
W_{T Package Weight}
Torque _{Terminals and Mounting Screws.}
MicrosemiWebsite-http://www.microsemi.com
Ratings
Unit
31
19
A
160
±30
V
1200
mJ
21
A
Min
-55
2500
Typ Max Unit
355
W
0.35
°C/W
0.15
150 °C
V
1.03
oz
29.2
g
10 ^in·lbf
1.1 ^N·m